Japanese researchers have produced a heterojunction (HJT) photo voltaic cell with silicon and a polymer materials generally known as PEDOT:PSS below room temperature circumstances. It has an effectivity of 10.1%, an open circuit voltage of 0.57 V, a short-circuit present density of 33.3 mA/cm2, and a fill issue of 0.53.
Scientists from Kyoto College in Japan have developed an organic-inorganic hybrid HJT photo voltaic cell with out using vacuum or excessive temperature processes. They used PEDOT:PSS, a polymer recognized for its low price and simple preparation properties, as a gap transport layer in a silicon (Si) heterojunction cell.
To type the electrodes with out utilizing costly processes comparable to display printing, electroless plating, and vacuum evaporation, lecturers used a extremely conductive silver (Ag) ink agent to coat the semiconductors. supplies as electrodes. Their photo voltaic cell manufacturing course of thus consists of solely three coating processes: coatings of a PEDOT:PESS layer on a naked Si wafer, of a prime Ag electrode on a PEDOT:PSS layer, and on a backside Ag electrode on the again floor of the Si wafer.
The researchers then investigated the optimum course of circumstances and sequence that maximized the photo voltaic cell’s efficiency. They discovered one of the best outcomes for cells made utilizing a primary moist hydrofluoric acid therapy to take away the native oxide layer on the Si floor, then the coating on the again of the Si wafer, adopted by immersion of the Si wafer in deionized water, then cowl the PEDOT : PSS layer, and eventually cowl the highest of the wafer.
After this course of, the workforce says it discovered “a drastic change in cell effectivity in the course of the immersion time [of the wafer in deionized water,] the place too shallow or extreme oxidation of the Si floor can significantly injury the cell.” The scientists discovered the optimum time interval for this course of to be one minute and the perfect rotation velocity for spin coating of PEDOT:PSS at 5,000 rpm.
A lab-scale of 8 mm2 produced below these circumstances exhibits a conversion effectivity of 10.1%, an open-circuit voltage of 0.57 V, a short-circuit present density of 33.3 mA/cm2and a fill issue of 0.53.
The teachers say that the effectivity worth is much from the state-of-the-art PEDOT:PSS/Si HJT photo voltaic cells “because of the extreme restriction of the method state… resistivity.”
Nonetheless, the scientists famous that their manufacturing methodology “might result in handy, low-cost, high-throughput photovoltaic machine manufacturing, significantly helpful to be used in growing international locations and areas of training.”
They shared their findings in “An all ambient, room temperature-processed photo voltaic cell from a naked silicon wafer,” which was just lately revealed in PNAS Nexus.
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